ICP CVD Inductively coupled plasma chemical vapor deposition equipment (single cavity)

PL-200(ICP CVD) inductively coupled plasma chemical vapor deposition equipment has a wide range of applications in the semiconductor industry, such as the preparation of silicon nitride (SiN), silicon oxide (SiO2) and other dielectric films, these films play an important role in semiconductor devices, as an insulating layer, passivation layer or protective layer. It can also be used to prepare semiconductor materials such as amorphous silicon (a-Si) for solar cells, thin film transistors and other fields. Icp-cvd technology can be used to prepare composite materials with excellent properties, such as fibrous or whisker sediments, which can be used as the reinforcement phase of composite materials to improve the mechanical properties and thermal stability of composite materials.

Device Application

ICP CVD inductively coupled plasma chemical vapor deposition (ICP-CVD) equipment is an advanced material preparation technology that combines the advantages of inductively coupled plasma and chemical vapor deposition (CVD). The device excites plasma in an inductively coupled manner to produce a large number of active ions and free radicals, which chemically react on the surface of the substrate to produce the desired film or coating. The main components of ICP CVD equipment include reaction chamber, vacuum system, gas path system, RF power supply and control system. The vacuum system is used to control the pressure and composition of the gas in the reaction chamber, the gas path system is responsible for conveying the reaction gas to the reaction chamber, the RF power supply provides the energy to excite the plasma, and the control system is responsible for the operation and monitoring of the entire equipment.

Equipment Features

Wide applicability, diverse selection of process gases
Strong process controllability to meet different application needs
Full area sprinkler head can achieve uniform gas distribution
The vertical etching effect on the sidewall is good, which improves performance and stability
Etching angle and depth can achieve high self-control
Etching damage is minimal to maintain the performance and stability of the material
Integrity and accuracy of anisotropic high preservation structures
High selection ratio provides more precise and controllable processing technology
Generate high-density plasma to achieve rapid etching

Process gas path

Configure 8 gas pipelines
Wafer Size

2 inches
Scope of application

Electronics and Communication, Mechanical Engineering, Micro Electro Mechanical Systems, Nanotechnology, Biotechnology, Optical Technology
Applicable Materials

Various dielectric materials, metals, and compound semiconductors (such as silicon oxide, silicon nitride, metals, III-V materials, etc.)