PL-200(PECVD) is a thin film deposition technology commonly used in the semiconductor industry to produce high-quality thin film layers, such as dielectric layers, low dielectric materials, etc., which are critical to improving the performance and reliability of semiconductor devices. In the production of optoelectronic devices, PECVD technology is used to deposit high-quality dielectric films and optical films to manufacture lasers, optical modulators, fiber optic sensors and other devices. PECVD is also used in the production of silicon-based optoelectronic devices, which have important applications in optical communication and integrated optics. PECVD plays an important role in the fields of semiconductor, new energy, biomedicine, electronics and materials science, etc. With the continuous progress of technology and the continuous expansion of application fields, this technology will play an important role in more fields and promote the development of related industries
PECVD (Plasma-enhanced Chemical vapor deposition) is a technique that uses plasma to promote chemical reactions at lower temperatures, primarily for deposition of solid films on substrates. This technology is in the reactor, through DC voltage, AC voltage, radio frequency, microwave or electron cyclotron resonance to achieve gas glow discharge, forming low temperature plasma. This plasma contains positive ions, electrons, and neutral reactive molecules in which free radicals are highly chemically active. Chemical reaction: Under the action of plasma, an appropriate amount of reaction gas is passed into the plasma, and these gases undergo chemical reactions in the plasma to generate the constituent atoms or molecules of the film. The material produced by the reaction forms a solid film on the surface of the substrate. Since the plasma provides the energy needed for the reaction, the process can be carried out at lower temperatures, usually between 200-400 degrees Celsius, which is particularly suitable for temperature sensitive materials. In addition, the advantages of PECVD technology include the ability to reduce the reaction temperature, reduce the thermal stress on the substrate material, while improving the reaction rate and the adhesion and density of the film.
Integrated circuit and chip manufacturing, Micro Electro Mechanical Systems (MEMS) manufacturing, display panels, solar cells, electronics and communications, biomedical applications, optical fields, etc
100-400℃
Dielectric materials (SiOx, SiNx, SiOxNy, etc.) Silicon based materials (Si, a-Si: H, poly Si)
Two, three, four, eight inches
