The IBSD-100 dual ion beam sputtering assisted deposition coating is developed on the basis of single ion beam sputtering technology, adding an auxiliary ion source on top of the main sputtering source. It can be used for sputtering deposition of single-layer and multi-layer thin films of various metals, alloys, III-V compounds, and semiconductor materials. It can also synthesize thin films of oxides, nitrides, carbides, etc. from elemental materials through reactions.
The main characteristics of dual ion beam sputtering assisted deposition coating are: 1. It can conveniently deposit various metal (including refractory metal) alloys, oxides, nitrides, carbides and other thin films, and can also deposit multi-layer composite thin films; 2. The film has good adhesion to the substrate, high purity, high density, no environmental pollution, and no cross contamination; 3. It can obtain a uniform large-area film and conveniently control the film thickness and film quality. 4. Auxiliary source bombardment can thoroughly remove various impurities on the surface of the substrate, activate the atoms on the surface of the substrate material, and facilitate the deposition of dense thin films with more uniform grains and smaller pores; 5. The ion beam assisted sputtering function during the deposition process can effectively improve the adhesion between the film and the substrate, and significantly reduce the film stress; 6. The microstructure during the thin film growth process can be precisely controlled;
| model | IBSD-100 |
| Ion beam aperture | Main source - focused beam sputtering ion source: Ø 100mm auxiliary source - collimated beam ion source: Ф100mm |
| Main source technical parameters | Adjustable range of ion energy: Ei = 0～1000 eV； Adjustable range of beam current: Jb = 0～110 mA； Uniformity of film thickness: Within a diameter range of 100mm, it is ≤± 4% |
| Technical parameters of auxiliary source | Adjustable range of ion energy: Ei = 0～1000 eV； Adjustable range of beam current: Jb = 0～100 mA； Diameter of auxiliary ion beam bombardment: Ф≥100mm； |
Substrate table | Table diameter: can hold samples of 4 inches or less; Rotation rate: 15RPM; |
| Water cooled target platform | Number of targets installed: 4 targets (target size ranging from 100mm to 5mm); Ion beam sputtering target temperature<100 ℃ (cooling target water temperature adjustable from 0 ℃ to 25 ℃); Target replacement method: Random external manual target replacement; The standard sputtering angle θ s is 45 °± 15 ° |
| Vacuum chamber and vacuum system | Vacuum process chamber: SUS304 stainless steel 1) High vacuum system: Front stage vacuum pump+molecular pump 2) Extreme vacuum: PLim ≤ 8.5 × 10-5Pa (no cold trap, no baking); 3) Vacuum measurement system: composite vacuum gauge, resistance vacuum gauge tube+ionization gauge tube |
| Gas path and gas source | The system standard configuration includes 2 gas paths, and the range of the flow controller (MFC) is 0-20 sccm; Equipped with 3-channel configuration (3-channel gas, Ar, N2, O2) |
| Ion source power supply and fully automatic control system | 1) The ion source power supply is designed according to a unique power multi system scheme, and the external characteristics of the power output are highly matched with the dynamic load of the ion source, ensuring that the ion source operates efficiently and stably. 2) Fully automatic+semi-automatic control; Support single process and multi process groups, operation records, running records, fault diagnosis, alarm and other functions. |
4 inches
Various new materials and devices in fields such as semiconductors, optics, microelectronics, micromechanics, communications, navigation, satellites, radar, nuclear fusion, superconductivity, etc., including sound, light, electricity, heat, magnetism, etc
Ion beam sputter cleaning (IBSC) substrates, ion beam ultimate polishing (IBP) substrates, ion beam sputter deposition (IBSD) thin films, ion beam assisted ion beam sputter deposition (IBA-IBSD) thin films, ion beam assisted ion beam sputter deposition synthesis (IBA-IBSOS) compound thin films, IBSD Lite off thin films
It can be used for sputtering deposition of single-layer and multi-layer thin films of various metals, alloys, III-V compounds, and semiconductor materials. It can also synthesize thin films of oxides, nitrides, carbides, etc. from elemental materials through reactions
